Part Ⅰ Lateral Self-Alignment 1.1 General 1 Physical Mechanisms of Self-Organized Formation of Quantum Dots 2 Routes Toward Lateral Self-Organization of Quantum Dots: the Model System SiGe on Si(001) 1.2 Compact Lateral Quantum Dot Configurations 3 Short-Range Lateral Ordering of GeSi Quantum Dots Due to Elastic Interactions 4 Hierarchical Self-Assembly of Lateral Quantum-Dot Molecules Around Nanoholes 1.3 Ordering in Single Layers 5 Energetics and Kinetics of Self-Organized Structure Formation in Solution Growth - the SiGelSi System 6 Ge Quantum Dot Self-Alignment on Vicinal Substrates 7 Lateral Arrangement of Ge Self-Assembled Quantum Dots on a Partially Relaxed Si:cGei_x Buffer Layer 8 Ordering of Wires and Self-Assembled Dots on Vicinal Si and GaAs (110) Cleavage Planes 1.4 Ordering by Layer Stacking 9 Stacking and Ordering in Self-Organized Quantum Dot Multilayer Structures 10 Self-Organized Anisotropic Strain Engineering for Lateral Quantum Dot Ordering 11 Towards Quantum Dot Crystals via Multilayer Stackingon Different Indexed Surfaces Part Ⅱ Forced Alignment 11.5 Growth on Shallow Modulated Surfaces 11.5.1 SiGe Islands 12 One-, Two-, and Three-Dimensionally Ordered GeSi Islands Grown on Prepatterned Si (001) Substrates 13 Ordered SiGe Island Arrays: Long Range Material Distribution and Possible Device Applications 14 Nanoscale Lateral Control of Ge Quantum Dot Nucleation Sites on Si(001) Using Focused Ion Beam Implantation 15 Ge Nanodroplets Self-Assembly on Focused Ion Beam Patterned Substrates 16 Metallization and Oxidation Templating of Sur facesfor Directed Island Assembly ……
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